Microhardness of Sn‐doped InP
- 1 February 1989
- journal article
- research article
- Published by Wiley in Crystal Research and Technology
- Vol. 24 (2) , K33-K35
- https://doi.org/10.1002/crat.2170240226
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
- Ultramicrohardness measurements of coated samplesThin Solid Films, 1987
- Microhardness studies on some compound semiconductorsCrystal Research and Technology, 1985
- Microhardness of carbon-doped (111) p-type Czochralski siliconJournal of Materials Science Letters, 1985
- Doping effects on indentation plasticity and fracture in germaniumJournal of Materials Science, 1985
- Microhardness of a nitrogen-implanted layer on mild steelThin Solid Films, 1985
- Hardness anisotropy of III-V semiconducting compounds and alloysJournal of Applied Physics, 1984
- Hardness measurements of thin filmsThin Solid Films, 1984
- Surface softening in silicon by ion implantationJournal of Materials Science, 1984
- Hardness anisotropy of InPJournal of Materials Science, 1976