Above room temperature operation of short wavelength (λ=3.8μm) strain-compensated In0.73Ga0.27As–AlAs quantum-cascade lasers
- 30 August 2004
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 85 (9) , 1478-1480
- https://doi.org/10.1063/1.1789246
Abstract
We demonstrate the design and implementation of a broad-gain and low-threshold (Jth=860A∕cm2 at 8K) quantum-cascade laser emitting between 3.7 and 4.2μm. The active region design is based on strain-compensated In0.73Ga0.27As–AlAs on InP. Laser operation in pulsed mode is achieved up to a temperature of 330K with maximum single-facet output peak powers of 6W at 8K and 240mW at 296K. The temperature coefficient T0 is 119K.Keywords
This publication has 11 references indexed in Scilit:
- Terahertz quantum-cascade laser at λ≈100 μm using metal waveguide for mode confinementApplied Physics Letters, 2003
- Short-wavelength intersubband absorption in strain compensated InGaAs/AlAs quantum well structures grown on InPApplied Physics Letters, 2003
- An InAs-Based Intersubband Quantum Cascade LaserJapanese Journal of Applied Physics, 2002
- Improvement of λ≈5 μm quantum cascade lasers by blocking barriers in the active regionsApplied Physics Letters, 2002
- Recent progress in quantum cascade lasers and applicationsReports on Progress in Physics, 2001
- Band parameters for III–V compound semiconductors and their alloysJournal of Applied Physics, 2001
- Quantum-cascade lasers based on a bound-to-continuum transitionApplied Physics Letters, 2001
- Short wavelength (λ∼3.4 μm) quantum cascade laser based on strained compensated InGaAs/AlInAsApplied Physics Letters, 1998
- Band lineups and deformation potentials in the model-solid theoryPhysical Review B, 1989
- Band nonparabolicity effects in semiconductor quantum wellsPhysical Review B, 1987