Chapter 2 Glow Discharge
- 1 January 1984
- book chapter
- Published by Elsevier
- Vol. 21, 9-39
- https://doi.org/10.1016/s0080-8784(08)63020-3
Abstract
No abstract availableKeywords
This publication has 29 references indexed in Scilit:
- Detection of Neutral Species in Silane Plasma Using Coherent Anti-Stokes Raman SpectroscopyJapanese Journal of Applied Physics, 1983
- Observations of CmFn Radicals in Reactive Ion Beam EtchingJapanese Journal of Applied Physics, 1982
- (Invited) Growth and Characterization of Amorphous Hydrogenated SiliconJapanese Journal of Applied Physics, 1982
- High-Rate Reactive Ion Etching of SiO2 Using a Magnetron DischargeJapanese Journal of Applied Physics, 1981
- A New Technique of Boron Doping in Si:H FilmsJapanese Journal of Applied Physics, 1981
- Novel Deposition Technique of a-Si: H –Silane Glow Discharge in Magnetic Field–Japanese Journal of Applied Physics, 1981
- Optical emission spectroscopy: Toward the identification of species in the plasma deposition of hydrogenated amorphous silicon alloysSolar Cells, 1980
- Low-temperature crystallization of doped a-Si:H alloysApplied Physics Letters, 1980
- Electrical and optical properties of amorphous silicon carbide, silicon nitride and germanium carbide prepared by the glow discharge techniquePhilosophical Magazine, 1977
- The ground-state rotational constants of silaneMolecular Physics, 1974