Doping profiles in Zn-implanted GaAs after laser annealing
- 1 September 1979
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 50 (9) , 6000-6002
- https://doi.org/10.1063/1.326705
Abstract
Differential Hall‐effect and sheet‐resistivity measurements have been carried out to investigate electrical properties of p‐type layers formed by implanting 100‐keV Zn ions into Cr‐doped semi‐insulating GaAs at room temperature and by subsequent laser irradiation (Nd : YAG, λ=1.06 μm) using chemical‐vapor‐deposited (CVD) Si3N4 films as the encapsulant. It has been shown that very shallow (approximately 0.3 μm) and highly doped (pmax=4×1019 cm−3) p‐type GaAs layers can be fabricated by Zn implantation with an ion dose of 1.0×1015 cm−2 followed by laser irradiation at a beam energy density of 1.5 J cm−2.This publication has 10 references indexed in Scilit:
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