A study of deep-level defects in metalorganic vapor-phase-epitaxy-grown ZnSe on GaAs by deep-level transient spectroscopy
- 1 September 1990
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 68 (5) , 2535-2537
- https://doi.org/10.1063/1.346476
Abstract
No abstract availableThis publication has 20 references indexed in Scilit:
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