Polycrystalline silicon film formation at low temperature using ultra-high-frequency plasma enhanced chemical vapor deposition
- 31 October 1999
- journal article
- Published by Elsevier in Materials Letters
- Vol. 41 (1) , 16-19
- https://doi.org/10.1016/s0167-577x(99)00097-x
Abstract
No abstract availableKeywords
Funding Information
- Ministry of Education, Culture, Sports, Science and Technology
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