PtSi contact metallurgy formed by three-temperature annealing sequences and short annealing time
- 1 January 1987
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 61 (1) , 201-205
- https://doi.org/10.1063/1.338856
Abstract
PtSi contact metallurgy has been formed using a wide series of annealing sequences, employing the three‐temperature scheme developed earlier but with much shorter annealing durations. Using either 200‐300‐550 °C or 200‐300‐450 °C schemes and a total annealing time between 20 and 40 min in forming gas (N2‐H2 9:1), all the films show complete reaction between Pt and Si, a necessary condition for high‐quality PtSi contact used in devices as determined from earlier studies. The films also show surface passivating oxide layers of good resistance against etching in aqua regia. The results obtained make the three‐temperature process a promising one for the fabrication of devices containing PtSi contact metallurgy.This publication has 7 references indexed in Scilit:
- PtSi Contact Metallurgy Using Sputtered Pt and Different Annealing ProcessesJournal of the Electrochemical Society, 1986
- PtSi contact metallurgy: Comparison of different annealing sequences, annealing time and ambients, and deposition techniques of PtJournal of Applied Physics, 1986
- PtSi contact metallurgy using electron-beam evaporated Pt films and different annealing processesJournal of Vacuum Science & Technology B, 1986
- Effect of the sintering process on the formation and passivation of PtSiJournal of Vacuum Science & Technology A, 1986
- Thermal oxidation of the silicides CoSi2, CrSi2, NiSi2, PtSi, TiSi2 and ZrSi2Thin Solid Films, 1985
- Formation of Pt silicides: The effect of oxygenJournal of Applied Physics, 1985
- Marker Experiments for the moving Species in Silicides During Solid Phase Epitaxy of Evaporated SiMRS Proceedings, 1983