Growth and Structure of Evaporated Silicon Layers
- 1 January 1966
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 13 (2) , 359-372
- https://doi.org/10.1002/pssb.19660130208
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
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- Crystallographic imperfections in siliconDiscussions of the Faraday Society, 1964
- Structure and Origin of Stacking Faults in Epitaxial SiliconJournal of Applied Physics, 1963
- Crystallographic Imperfections in Epitaxially Grown SiliconJournal of Applied Physics, 1962
- Growth of monocrystals of germanium from an undercooled meltProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1955
- CXXVIII. Stable dislocations in the common crystal latticesJournal of Computers in Education, 1953
- Dislocation Nodes in Face-Centred Cubic LatticesProceedings of the Physical Society. Section B, 1953