The use of electron beams in the preparation of epitaxial silicon films
- 1 March 1965
- journal article
- Published by Elsevier in Microelectronics Reliability
- Vol. 4 (1) , 91-94
- https://doi.org/10.1016/0026-2714(65)90264-7
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Epitaxial Growth of Silicon by Vacuum SublimationJournal of the Electrochemical Society, 1964
- Sublimation Rate of Silicon in High VacuumJapanese Journal of Applied Physics, 1963
- Preparation and evaluation of epitaxial silicon films prepared by vacuum evaporationVacuum, 1963
- Preparation of Evaporated Silicon FilmsReview of Scientific Instruments, 1963
- Formation Conditions and Structure of Thin Epitaxial Germanium Films on Single-Crystal SubstratesJournal of Applied Physics, 1962
- Microminiaturization by thin film and solid circuit techniquesBritish Journal of Applied Physics, 1962
- Epitaxial Growth of Silicon by Hydrogen Reduction of SiHCl[sub 3] onto Silicon SubstratesJournal of the Electrochemical Society, 1962
- Study of Electron Bombardment of Thin FilmsJournal of Applied Physics, 1961
- Field emission from silicon and germanium; field desorption and surface migrationJournal of Physics and Chemistry of Solids, 1961
- Boride CathodesJournal of Applied Physics, 1951