The effect of the hole current on the channel inversion in trench insulated gate bipolar transistors (TIGBT)
- 31 March 1994
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 37 (3) , 507-514
- https://doi.org/10.1016/0038-1101(94)90018-3
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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