InGaAs/InP heterojunction bipolar transistor grownby all-solid source molecular beam epitaxy
- 17 August 1995
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 31 (17) , 1514-1515
- https://doi.org/10.1049/el:19951015
Abstract
State-of-the-art InGaAs/InP heterojunction bipolar transistors were grown by all-solid source molecular beam epitaxy. Fabricated transistors showed cutoff frequencies of >100 GHz with an emitter area of 1.5 × 5 µm2. Together with recent studies, these results demonstrate that the valved cracker technique is a very competitive nontoxic growth method.Keywords
This publication has 3 references indexed in Scilit:
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