Effect of two types of surface sites on the characteristics of Si3N4-gate pH-ISFETs
- 1 November 1996
- journal article
- Published by Elsevier in Sensors and Actuators B: Chemical
- Vol. 37 (1-2) , 13-17
- https://doi.org/10.1016/s0925-4005(97)80067-6
Abstract
No abstract availableKeywords
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