Growth of a GaN crystal free from cracks on a (1 1 1)Si substrate by selective MOVPE
- 7 May 2002
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 242 (1-2) , 77-81
- https://doi.org/10.1016/s0022-0248(02)01352-0
Abstract
No abstract availableKeywords
Funding Information
- Ministry of Education, Culture, Sports, Science and Technology
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