Passivation of (111) Si/SiO2 interface by fluorine
- 25 May 1992
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 60 (21) , 2634-2636
- https://doi.org/10.1063/1.106878
Abstract
High quality Si/SiO2 interface and improved oxide reliability have been achieved on (111) Si substrate by introducing NF3 into the oxidation furnace. The interface properties and the radiation hardness of the fluorinated (111) metal oxide semiconductor capacitors have been studied as a function of the amount of NF3 introduced.Keywords
This publication has 4 references indexed in Scilit:
- Radiation hardened micron and submicron MOSFETs containing fluorinated oxidesIEEE Transactions on Nuclear Science, 1989
- The effect of fluorine implantation on the interface radiation hardness of Si-gate metal-oxide-semiconductor transistorsJournal of Applied Physics, 1989
- Radiation Response of MOS Capacitors Containing Fluorinated OxidesIEEE Transactions on Nuclear Science, 1987
- CRYSTALLOGRAPHIC SYMMETRY OF SURFACE STATE DENSITY IN THERMALLY OXIDIZED SILICONApplied Physics Letters, 1968