The effect of fluorine implantation on the interface radiation hardness of Si-gate metal-oxide-semiconductor transistors
- 15 October 1989
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 66 (8) , 3909-3912
- https://doi.org/10.1063/1.344012
Abstract
The radiation hardness of fluorinated SiO2/Si interface in metal-oxide-semiconductor field-effect transistors has been found to depend strongly on the amount of fluorine introduced. In this study, the fluorine was introduced by low-energy F implantation onto the surface of the polycrystalline silicon gate electrode, followed by annealing at 950 °C to diffuse F into the gate SiO2 toward the SiO2/Si interface. The improved radiation hardness is attributed to the strain relaxation near the SiO2/Si interface by fluorine incorporation.This publication has 8 references indexed in Scilit:
- Hot-electron hardened Si-gate MOSFET utilizing F implantationIEEE Electron Device Letters, 1989
- Radiation and hot-electron effects on SiO2/Si interfaces with oxides grown in O2 containing small amounts of trichloroethaneApplied Physics Letters, 1988
- Dramatic improvement of hot-electron-induced interface degradation in MOS structures containing F or Cl in SiO/sub 2/IEEE Electron Device Letters, 1988
- Radiation Response of MOS Capacitors Containing Fluorinated OxidesIEEE Transactions on Nuclear Science, 1987
- Accounting for Dose-Enhancement Effects with CMOS TransistorsIEEE Transactions on Nuclear Science, 1985
- A Simple Model for Separating Interface and Oxide Charge Effects in MOS Device CharacteristicsIEEE Transactions on Nuclear Science, 1984
- Correlating the Radiation Response of MOS Capacitors and TransistorsIEEE Transactions on Nuclear Science, 1984
- Measurement of Radiation-Induced Interface Traps Using MOSFETsIEEE Transactions on Nuclear Science, 1984