Radiation hardened micron and submicron MOSFETs containing fluorinated oxides

This publication has 18 references indexed in Scilit:

• Dielectric characteristics of fluorinated ultradry SiO2
  Applied Physics Letters, 1989
• The effect of fluorine on gate dielectric properties
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,1987
• Post-Irradiation Effects in Field-Oxide Isolation Structures
  IEEE Transactions on Nuclear Science, 1987
• Mechanical Stress Dependence of Radiation Effects in MOS Structures
  IEEE Transactions on Nuclear Science, 1986
• Correlation of Radiation Effects in Transistors and Integrated Circuits
  IEEE Transactions on Nuclear Science, 1985
• A Simple Model for Separating Interface and Oxide Charge Effects in MOS Device Characteristics
  IEEE Transactions on Nuclear Science, 1984
• Correlating the Radiation Response of MOS Capacitors and Transistors
  IEEE Transactions on Nuclear Science, 1984
• Dependence of X-Ray Generation of Interface Traps on Gate Metal Induced Interfacial Stress in MOS Structures
  IEEE Transactions on Nuclear Science, 1984
• Measurement of Radiation-Induced Interface Traps Using MOSFETs
  IEEE Transactions on Nuclear Science, 1984
• Influence of fluorine on oxidation-induced stacking faults
  Applied Physics Letters, 1980