Electronic and magnetic properties of 3d transition-metal-doped GaAs
- 1 May 2001
- journal article
- Published by Elsevier in Physica E: Low-dimensional Systems and Nanostructures
- Vol. 10 (1-3) , 143-147
- https://doi.org/10.1016/s1386-9477(01)00070-4
Abstract
No abstract availableKeywords
Funding Information
- Ministry of Education, Culture, Sports, Science and Technology (12650312)
- Japan Society for the Promotion of Science
This publication has 9 references indexed in Scilit:
- Preparation and Characterization of Fe-Based III-V Diluted Magnetic Semiconductor (Ga, Fe)AsJapanese Journal of Applied Physics, 2000
- Properties of ferromagnetic III–V semiconductorsJournal of Magnetism and Magnetic Materials, 1999
- First-principles calculations of electronic structures of diluted magnetic semiconductors (Ga,Mn)AsJournal of Magnetism and Magnetic Materials, 1999
- Ferromagnetism and Its Stability in the Diluted Magnetic Semiconductor (In, Mn)AsPhysical Review Letters, 1998
- Transport properties and origin of ferromagnetism in (Ga,Mn)AsPhysical Review B, 1998
- Band structures of zinc-blende-type MnAs and (MnAs)1(GaAs)1 superlatticeJournal of Magnetism and Magnetic Materials, 1998
- (Ga,Mn)As: A new diluted magnetic semiconductor based on GaAsApplied Physics Letters, 1996
- Magnetotransport properties ofp-type (In,Mn)As diluted magnetic III-V semiconductorsPhysical Review Letters, 1992
- Diluted magnetic III-V semiconductorsPhysical Review Letters, 1989