Modification of the electric conduction at the pentacene∕SiO2 interface by surface termination of SiO2
- 28 February 2005
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 86 (10)
- https://doi.org/10.1063/1.1875749
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- Growth control of pentacene films on SiO2/Si substrates towards formation of flat conduction layersThin Solid Films, 2004
- Control of carrier density by self-assembled monolayers in organic field-effect transistorsNature Materials, 2004
- Direct observation of contact and channel resistance in pentacene four-terminal thin-film transistor patterned by laser ablation methodApplied Physics Letters, 2004
- Nanoscale organic transistors that use source/drain electrodes supported by high resolution rubber stampsApplied Physics Letters, 2003
- Growth of Ultrasmooth Octadecyltrichlorosilane Self-Assembled Monolayers on SiO2Langmuir, 2003
- Pentacene thin film transistors on inorganic dielectrics: Morphology, structural properties, and electronic transportJournal of Applied Physics, 2003
- Humidity sensors based on pentacene thin-film transistorsApplied Physics Letters, 2002
- High-mobility polymer gate dielectric pentacene thin film transistorsJournal of Applied Physics, 2002
- Effects of film morphology and gate dielectric surface preparation on the electrical characteristics of organic-vapor-phase-deposited pentacene thin-film transistorsApplied Physics Letters, 2002
- Thin-film transistors based on well-ordered thermally evaporated naphthacene filmsApplied Physics Letters, 2002