Characterization of ZnS grown by metal-organic chemical vapour deposition on GaAs(100) using t-butyl mercaptan and dimethylzinc
- 1 February 1992
- journal article
- research article
- Published by Wiley in Advanced Materials for Optics and Electronics
- Vol. 1 (1) , 43-46
- https://doi.org/10.1002/amo.860010108
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- MOVPE of ZnSe using organometallic allyl selenium precursorsJournal of Crystal Growth, 1991
- Recent developments in the pyrolytic and photolytic deposition of (Cd,Hg)Te and related II–VI materialsJournal of Crystal Growth, 1988
- Reaction mechanisms in the organometallic vapor phase epitaxial growth of GaAsApplied Physics Letters, 1988
- OMVPE of Zn-based II–IV semiconductors using methylmercaptan as a novel sulfur sourceJournal of Crystal Growth, 1988
- Effects of Lattice Mismatch on Crystallographic Properties of ZnS Grown on GaP and GaAs by MOCVDJapanese Journal of Applied Physics, 1988
- Growth of high-quality GaAs using trimethylgallium and diethylarsineApplied Physics Letters, 1987
- ZnSe-ZnS strained-layer superlattice grown by low pressure metalorganic vapor phase epitaxy using methylalkylsApplied Physics Letters, 1986
- Relay Using Multilayer Piezoelectric ActuatorJapanese Journal of Applied Physics, 1985
- Metal-organic chemical vapour deposition (MOCVD) of compound semiconductors. Part 1.—Optimisation of reactor design for the preparation of ZnSeJournal of the Chemical Society, Faraday Transactions 1: Physical Chemistry in Condensed Phases, 1985
- Growth of ZnS by Metalorganic Chemical Vapor DepositionJapanese Journal of Applied Physics, 1983