Radiation Hardened Silicon Devices Using a Novel Thick Oxide
- 1 January 1985
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 32 (6) , 3971-3974
- https://doi.org/10.1109/tns.1985.4334052
Abstract
A radiation hardened thick oxide technology is proposed. It utilizes a double layer consisting of a thick chemically deposited SiO2 over a thin thermal SiO2. In npn transistors, a 1.5 order of magnitude improvement in radiation tolerance is observed when this technology is combined with a highly doped Si surface layer.Keywords
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