Degradation Analysis of Lateral PNP Transistors Exposed to X-Ray Irradiation
- 1 January 1984
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 31 (6) , 1513-1517
- https://doi.org/10.1109/tns.1984.4333540
Abstract
Degraded current gain by X-ray irradiation is analyzed for lateral pnp transistors. The relationship between the total dose of X-ray and the surface recombination velocity is also studied. Surface recombination velocity is evaluated in two regions: the depletion region of the emitter-base junction and the non-depleted charge-neutral region of the base surface. X-ray total dose dependency of surface recombination velocity is experimentally derived as: sdep = 0.33D0.9 for depletion regions, and sSur = 3.8D0.8 for non-depleted surface region in the device structure. A radiation hardened structure with a surface potential barrier for lateral pnp transistors is proposed. The possibility of more than one-order of magnitude improvement in radiation hardness is demonstrated by both simulation and experiments.Keywords
This publication has 9 references indexed in Scilit:
- Total Dose Effects in Recessed Oxide Digital Bipolar MicrocircuitsIEEE Transactions on Nuclear Science, 1983
- The influences of traps on the generation-recombination current in silicon diodesSolid-State Electronics, 1980
- Interface-State Generation in Radiation-Hard OxidesIEEE Transactions on Nuclear Science, 1980
- A Framework for Understanding Radiation-Induced Interface States in SiO2 MOS StructuresIEEE Transactions on Nuclear Science, 1980
- Radiation Effects Modeling and Experimental Data on I2L DevicesIEEE Transactions on Nuclear Science, 1976
- Investigation of Radiation-Induced Interface States Utilizing Gated-Bipolar and MOS StructuresIEEE Transactions on Nuclear Science, 1972
- An investigation of lateral transistors -d.c. characteristicsSolid-State Electronics, 1971
- Modified theory of the current/voltage relation in silicon p – n junctionsElectronics Letters, 1968
- Effects of ionizing radiation on oxidized silicon surfaces and planar devicesProceedings of the IEEE, 1967