A Hardened Field Insulator

1 January 1981

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science

Vol. 28 (6) , 4102-4104
https://doi.org/10.1109/tns.1981.4335682

Abstract

In this paper we report results on a new hardened field oxide which exhibits improved resistance to ionizing radiation. This new field insulator shows much less radiation-induced shift in flatband voltage than that of ordinary SiO2 (either thermally grown or chemically vapor deposited). Results are obtained over a range of bias conditions (-10 volts to +22.5 volts) and radiation dosage (0 ~ 4 × 104 rads (SiO2)).

Keywords

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