Influence of laser fluence and dopant gas pressure on properties of photochemical doping of Si into GaAs using XeCl excimer Laser
- 1 March 1988
- journal article
- Published by Springer Nature in Applied Physics A
- Vol. 45 (3) , 189-192
- https://doi.org/10.1007/bf00615003
Abstract
No abstract availableKeywords
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