Excitation Spectra of Donors in Aluminum Antimonide
- 15 March 1968
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 167 (3) , 717-729
- https://doi.org/10.1103/physrev.167.717
Abstract
The photoexcitation spectra associated with tellurium and selenium donors in aluminum antimonide have been studied. At liquid-helium temperatures, sharp lines are observed in the spectra associated with both donors. At liquid-nitrogen temperature, the lines of the tellurium spectrum broaden, whereas those of selenium vanish, being replaced by a broad region of continuous high absorption. For both tellurium and selenium donors, none of the above features are observed at 300°K. In each case, at photon energies higher than the donor ionization energy, absorption peaks have been observed which are consistent with their arising from electronic transitions accompanied by the emission of phonons. The effect of uniaxial stress has been studied for the excitation spectrum of both donors. On the basis of the absence of splittings of the selenium lines for compressive force F parallel to , it is deduced that the conduction-band minima occur along . On the basis of the number of stress-induced components and their dichroic properties, it is concluded that line 1 of the tellurium donor at 38.31 meV and line 1 of the selenium donor at 117.13 meV are due to a transition. Similarly, line 2 of the tellurium donor at 57.96 meV and line 2 of the selenium donor at 134.3 meV have been attributed to a transition.
Keywords
This publication has 40 references indexed in Scilit:
- Excitation Spectra of Arsenic and Antimony Impurities in Germanium under Uniaxial CompressionPhysical Review B, 1968
- Spectroscopic Investigation of Group-III Acceptor States in SiliconPhysical Review B, 1967
- Photoexcitation and Photoionization of Neutral Manganese Acceptors in Gallium ArsenidePhysical Review Letters, 1967
- Donor excitation spectrum in n-type aluminum antimonidePhysics Letters, 1966
- Optical Determination of the Symmetry of the Ground States of Group-V Donors in SiliconPhysical Review B, 1965
- Excitation Spectrum of Arsenic Impurity in Germanium under Uniaxial CompressionPhysical Review B, 1965
- Excitation Spectra of Lithium Donors in Silicon and GermaniumPhysical Review B, 1965
- The excitation spectrum of boron in silicon under uniaxial stressPhysics Letters, 1965
- Effect of Uniaxial Stress on the Excitation Spectra of Donors in SiliconPhysical Review B, 1965
- The effect of uniaxial stress on the excitation spectrum of a group III impurity in GermaniumSolid State Communications, 1964