Thermal drift of piezoresistive properties of LPCVD polysilicon thin films between room temperature and 200 °C
- 1 April 1997
- journal article
- Published by Elsevier in Materials Science and Engineering: B
- Vol. 46 (1-3) , 43-46
- https://doi.org/10.1016/s0921-5107(96)01927-7
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- Piezoresistance of boron-doped PECVD and LPCVD polycrystalline silicon filmsSensors and Actuators A: Physical, 1995
- Polysilicon as a material for microsensor applicationsSensors and Actuators A: Physical, 1992
- Piezoresistive pressure sensors based on polycrystalline siliconSensors and Actuators A: Physical, 1991
- Polysilicon SOI pressure sensorSensors and Actuators, 1989
- Polycrystalline silicon strain sensorsSensors and Actuators, 1985
- Polycrystalline silicon-on-metal strain gauge transducersIEEE Transactions on Electron Devices, 1983
- A model for conduction in polycrystalline silicon—Part I: TheoryIEEE Transactions on Electron Devices, 1981
- Modeling and optimization of monolithic polycrystalline silicon resistorsIEEE Transactions on Electron Devices, 1981
- Piezoresistive properties of polycrystalline siliconJournal of Applied Physics, 1976
- The electrical properties of polycrystalline silicon filmsJournal of Applied Physics, 1975