Electrical characteristics of Au/Ti-(n-type) InP Schottky diodes
- 11 July 1977
- journal article
- Published by IOP Publishing in Journal of Physics D: Applied Physics
- Vol. 10 (10) , 1323-1328
- https://doi.org/10.1088/0022-3727/10/10/008
Abstract
Metal-semiconductor surface barriers have been formed by the vacuum evaporation of Au/Ti on to epitaxially grown films of n-type InP. The current and capacitance of these devices were measured as a function of voltage at several temperatures and analysed in terms of existing theories. The particular contact fabrication process which has been used produces a relatively high (0.53 eV) room-temperature barrier height; the temperature dependence of the barrier height (4.8*10-4 eV K-1) is approximately equal to that of the energy gap in InP. The diodes exhibited ideality factors of approximately 1.07 and room-temperature saturation current densities approximately 3*10-5 A cm-2.Keywords
This publication has 10 references indexed in Scilit:
- Interface state density in Au-nGaAs Schottky diodesSolid-State Electronics, 1977
- The electrical properties of n-type semi-insulating indium phosphideJournal of Physics C: Solid State Physics, 1976
- InP Schottky-gate field-effect transistorsIEEE Transactions on Electron Devices, 1975
- Au - (n-type) InP Schottky barriers and their use in determining majority carrier concentrations in n-type InPJournal of Physics D: Applied Physics, 1973
- Temperature dependence of the schottky barrier height in gallium arsenideSolid State Communications, 1972
- High-efficiency microwave generation in InPElectronics Letters, 1972
- Studies of tunnel MOS diodes I. Interface effects in silicon Schottky diodesJournal of Physics D: Applied Physics, 1971
- Indium phosphide microwave oscillatorsIEEE Transactions on Electron Devices, 1971
- The preparation of high purity epitaxial InPSolid State Communications, 1970
- Films Built by Depositing Successive Monomolecular Layers on a Solid SurfaceJournal of the American Chemical Society, 1935