Capacitance Anomaly in the Negative Differential Resistance Region of Resonant Tunneling Diodes
- 1 March 1997
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 36 (3B) , L330
- https://doi.org/10.1143/jjap.36.l330
Abstract
For In0.53Ga0.47As/AlAs resonant tunneling diodes, the peak structure in the capacitance-voltage ( C-V) characteristics in the negative differential resistance (NDR) region was investigated. We experimentally reveal that the electron sheet density that is responsible for the capacitance peak is equal to half of that in the quantum well at the peak voltage. The derived electron sheet density in the quantum well at the peak current is 3.2×1011 cm-2 and the resulting electron lifetimes in the quantum well are 320 and 580 fs for 2.0- and 2.3-nm AlAs barriers.Keywords
This publication has 13 references indexed in Scilit:
- In 0.53 Ga 0.47 As/AlAs resonant tunnellingdiodes withswitching time of 1.5 psElectronics Letters, 1995
- Picosecond-switching time of In/sub 0.53/Ga/sub 0.47/As/AlAs resonant-tunneling diodes measured by electro-optic sampling techniqueIEEE Electron Device Letters, 1995
- Effect of spacer layers on capacitance of resonant tunneling diodesJournal of Applied Physics, 1994
- Observation of a large capacitive current in a double barrier resonant tunneling diode at resonanceApplied Physics Letters, 1994
- Equivalent circuit and capacitance of double barrier resonant tunneling diodeJournal of Applied Physics, 1993
- Hot electron injection in InAlGaAs/InGaAs ballistic collection transistorsSemiconductor Science and Technology, 1992
- Charge accumulation in a double-barrier resonant-tunneling structure studied by photoluminescence and photoluminescence-excitation spectroscopyPhysical Review Letters, 1990
- Monolithic sampling head ICIEEE Transactions on Microwave Theory and Techniques, 1990
- Small-signal impedance of GaAs-Al x Ga 1−x as resonant tunnelling heterostructures at microwave frequencyElectronics Letters, 1988
- A small-signal equivalent-circuit model for GaAs-AlxGa1−xAs resonant tunneling heterostructures at microwave frequenciesJournal of Applied Physics, 1987