MBE grown InAlAs/InGaAs lattice mismatched layers for HEMT application on GaAs substrate
- 1 January 1998
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 123-124, 734-737
- https://doi.org/10.1016/s0169-4332(97)00556-4
Abstract
No abstract availableKeywords
This publication has 18 references indexed in Scilit:
- High-Performance In0.5Al0.5As/In0.5Ga0.5As High Electron Mobility Transistors on GaAsJapanese Journal of Applied Physics, 1996
- Growth of high quality Al0.48In0.52As/Ga0.47In 0.53As heterostructures using strain relaxed AlxGayIn1−x−yAs buffer layers on GaAsApplied Physics Letters, 1996
- Material properties of compositional graded InxGa1−xAs and InxAl1−xAs epilayers grown on GaAs substratesJournal of Applied Physics, 1996
- X-ray reciprocal-space mapping of strain relaxation and tilting in linearly graded InAlAs buffersJournal of Applied Physics, 1996
- Strain relief in linearly graded composition buffer layers: A design scheme to grow dislocation-free (<105 cm−2) and unstrained epilayersApplied Physics Letters, 1994
- Residual strain analysis of InxGa1−xAs/GaAs heteroepitaxial layersApplied Physics Letters, 1992
- Metamorphic In0.3Ga0.7As/In0.29Al0.71As layer on GaAs: A new structure for high performance high electron mobility transistor realizationApplied Physics Letters, 1992
- Strain relaxation of compositionally graded InxGa1−xAs buffer layers for modulation-doped In0.3Ga0.7As/In0.29Al0.71As heterostructuresApplied Physics Letters, 1992
- Lattice-Mismatched Growth and Transport Properties of InAlAs/InGaAs Heterostructures on GaAs SubstratesJapanese Journal of Applied Physics, 1989
- In0.30Al0.70As/In0.30Ga0.70As quasi-insulating gate strained-layer field effect transistors grown by molecular beam epitaxyThin Solid Films, 1988