Plasma Chemistry Dependent ECR Etching of GaN
- 1 January 1995
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
Electron cyclotron resonance (ECR) etching of GaN in Cl2/H2/Ar, Cl2/SF6/Ar, BCl3/H2Ar and BCl3/SF6/Ar plasmas is reported as a function of percent H2 and SF6. GaN etch rates were found to be 2 to 3 times greater in Cl2/H2/Ar discharges than in BCl3/H2/Ar discharges independent of the H2 concentration. In both discharges, the etch rates decreased as the H2 concentration increased above 10%. When SF6 was substituted for H2, the GaN etch rates in BCl3-based plasmas were greater than those for the Cl2-based discharges as the SF6 concentration increased. GaN etch rates were greater in Cl2/H2/Ar discharges as compared to Cl2/SF6/Ar discharges whereas the opposite trend was observed for BCl3,-based discharges. Variations in surface morphology and near-surface stoichiometry due to plasma chemistries were also investigated using atomic force microscopy and Auger spectroscopy, respectively.Keywords
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