50-Gb/s silicon optical modulator with traveling-wave electrodes
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- 16 May 2013
- journal article
- Published by Optica Publishing Group in Optics Express
- Vol. 21 (10) , 12776-12782
- https://doi.org/10.1364/oe.21.012776
Abstract
We demonstrate silicon Mach-Zehnder Interferometer (MZI) optical modulator with 50.1-Gb/s data rate and 5.56 dB dynamic extinction ratios. The phase shifter is composed by a 4 mm-long reverse-biased p-n junction with a modulation efficiency (Vπ·Lπ) of ~26.7 V·mm and phase shifter loss of ~1.04 dB/mm at Vbias = −6 V. The measured electro-optic bandwidth reaches 25.6 GHz at Vbias = −5 V. Compensation doping method and low loss traveling-wave electrodes are utilized to improve the modulator performance. Measurement result demonstrates that reasonable choosing of working point and doping profile of the silicon optical modulator is critical in order to match the performance requirement of the real application.Keywords
This publication has 12 references indexed in Scilit:
- 112-Gb/s monolithic PDM-QPSK modulator in siliconOptics Express, 2012
- 11-Gb/s 80-km transmission performance of zero-chirp silicon Mach-Zehnder modulator.Optics Express, 2012
- 50-Gb/s silicon quadrature phase-shift keying modulatorOptics Express, 2012
- High-speed low-voltage single-drive push-pull silicon Mach-Zehnder modulatorsOptics Express, 2012
- Monolithic silicon chip with 10 modulator channels at 25 Gbps and 100-GHz spacingOptics Express, 2011
- Fabrication of low loss and high speed silicon optical modulator using doping compensation methodOptics Express, 2011
- Integrating silicon photonicsNature Photonics, 2010
- High-performance Ge-on-Si photodetectorsNature Photonics, 2010
- Silicon optical modulatorsNature Photonics, 2010
- S-parameter-based IC interconnect transmission line characterizationIEEE Transactions on Components, Hybrids, and Manufacturing Technology, 1992