High-performance Ge-on-Si photodetectors
Top Cited Papers
- 30 July 2010
- journal article
- research article
- Published by Springer Nature in Nature Photonics
- Vol. 4 (8) , 527-534
- https://doi.org/10.1038/nphoton.2010.157
Abstract
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This publication has 64 references indexed in Scilit:
- Deviations from ideal nucleation-limited relaxation in high-Ge content compositionally graded SiGe∕SiJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2006
- Germanium-on-SOI Infrared Detectors for Integrated Photonic ApplicationsIEEE Journal of Selected Topics in Quantum Electronics, 2006
- High-Speed Germanium-on-SOI Lateral PIN PhotodiodesIEEE Photonics Technology Letters, 2004
- High-quality Ge epilayers on Si with low threading-dislocation densitiesApplied Physics Letters, 1999
- High-quality germanium photodiodes integrated on silicon substrates using optimized relaxed graded buffersApplied Physics Letters, 1998
- Controlling threading dislocation densities in Ge on Si using graded SiGe layers and chemical-mechanical polishingApplied Physics Letters, 1998
- Ge/Si (001) Photodetector for Near Infrared LightSolid State Phenomena, 1997
- Dislocations in strained-layer epitaxy: theory, experiment, and applicationsMaterials Science Reports, 1991
- Growth and characterization of Si1−xGex and Ge epilayers on (100) SiJournal of Applied Physics, 1988
- New infrared detector on a silicon chipIEEE Transactions on Electron Devices, 1984