InGaP/GaAs hole barrier asymmetry determined by (002) X-ray reflections and p-type DB-RTD hole transport
- 1 December 1998
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 195 (1-4) , 117-123
- https://doi.org/10.1016/s0022-0248(98)00712-x
Abstract
No abstract availableThis publication has 15 references indexed in Scilit:
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