Modeling of SiO2/Si(100) interface structure by using extended -Stillinger-Weber potential
- 1 April 1999
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 343-344, 370-373
- https://doi.org/10.1016/s0040-6090(98)01700-3
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Spin-density-functional theory of circular and elliptical quantum dotsPhysical Review B, 1999
- Kinetics of Initial Layer-by-Layer Oxidation of Si(001) SurfacesPhysical Review Letters, 1998
- Structure and electronic states of ultrathin SiO2 thermally grown on Si(100) and Si(111) surfacesApplied Surface Science, 1997
- 1.5 nm direct-tunneling gate oxide Si MOSFET'sIEEE Transactions on Electron Devices, 1996
- Chemical Structures of the SiO2Si InterfaceCritical Reviews in Solid State and Materials Sciences, 1995
- X-ray diffraction evidence for epitaxial microcrystallinity in thermally oxidized SiO2thin films on the Si(001) surfaceJournal of Physics: Condensed Matter, 1993
- Identification of strained silicon layers at Si-interfaces and clean Si surfaces by nonlinear optical spectroscopyPhysical Review Letters, 1993
- Evaluation of/(001)Si interface roughness using high-resolution transmission electron microscopy and simulationPhysical Review B, 1991
- Computer simulation of local order in condensed phases of siliconPhysical Review B, 1985
- A molecular dynamics method for simulations in the canonical ensembleMolecular Physics, 1984