Transimpedance amplifiers based on Si/SiGe MODFETs

5 March 1998

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 34 (5) , 499-500
https://doi.org/10.1049/el:19980370

Abstract

For the first time, two-stage transimpedance amplifiers using n-type Si/SiGe-MODFETs have been fabricated in order to check the potential of this novel device generation for analogue designs. S-parameter measurements showed –3 dBΩ bandwidths of 1.8 GHz with a transimpedance gain of 56 dBΩ. Circuits with lower bandwidths reached values for transimpedances of up to 72 dBΩ.

Keywords

N-TYPE SI/SIGE MODFET
1.8 GHZ
GAIN
BANDWIDTH
S-PARAMETER
ANALOGUE DESIGN
TWO-STAGE TRANSIMPEDANCE AMPLIFIER
SI-SIGE

This publication has 3 references indexed in Scilit:

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Electronics Letters, 1997
Design of Si/SiGe heterojunction complementary metal-oxide-semiconductor transistors
IEEE Transactions on Electron Devices, 1996
GaAs FET device and circuit simulation in SPICE
IEEE Transactions on Electron Devices, 1987