Growth and characterization of InGaAs/GaAsP strained layer superlattices

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Abstract
InGaAs/GaAsP strained layer superlattices have been grown by metalorganic chemical vapor deposition on (100) GaAs at 630 °C. The superlattices consist of 5–45 periods of alternate InGaAs and GaAsP layers with equal and opposite lattice mismatch up to 1.1% with respect to the GaAs substrate. Thus, their lattice constant as a whole will be matched to that of GaAs. Cross-sectional transmission electron microscopy and x-ray diffraction measurements indicate that the superlattices have high structural quality with no misfit dislocations at the interface between the superlattice and the substrate. A very intense and sharp photoluminescence spectrum (linewidth=4 meV) at 4.5 K suggests that the interface abruptness is less than two monolayers. Photoluminescence measurements along the beveled surface of the superlattice also indicate a high optical quality within the superlattice as well as at the superlattice/substrate interface.