Thermo‐ and galvanomagnetic measurements of semiconductors at ultrahigh pressure
- 30 January 2003
- journal article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 235 (2) , 288-292
- https://doi.org/10.1002/pssb.200301570
Abstract
The thermoelectric power, magnetoresistance, and thermomagnetic effects were measured for Te and Se micro‐samples in the vicinity of semiconductor–metal phase transitions at high pressure. From longitudinal and transverse Nernst‐Ettingshausen effects the scattering parameterrof holes was estimated and a decrease of the effective mass of holes was found during the closing of semiconductor gap. After the high pressure treatment an inversion of the sign of parameterrcorresponding to a change of scattering mechanism was observed for the Te sample due to an increase of the density of lattice defects.Keywords
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