Diffusion and noise in GaAs material and devices
- 1 January 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 38 (11) , 2531-2539
- https://doi.org/10.1109/16.97419
Abstract
No abstract availableThis publication has 11 references indexed in Scilit:
- Comment on noise in transferred electron amplifiersSolid-State Electronics, 1982
- Noise sources of hot carriers in space-charge regimesJournal of Applied Physics, 1981
- Electron transport properties in GaAs at high electric fieldsSolid-State Electronics, 1980
- Diffusion and the power spectral density and correlation function of velocity fluctuation for electrons in Si and GaAs by Monte Carlo methodsJournal of Applied Physics, 1980
- Diffusion coefficient of hot electrons in GaAsSolid State Communications, 1978
- Identity between spreading and noise diffusion coefficients for hot carriers in semiconductorsApplied Physics Letters, 1978
- Velocity-field characteristics of GaAs with Γc6-L c6-X c6 conduction-band orderingJournal of Applied Physics, 1977
- Transient and steady-state electron transport properties of GaAs and InPJournal of Applied Physics, 1977
- Transport Properties of GaAsPhysical Review B, 1968
- Computer Study of Bulk GaAs Devices with Random One-Dimensional Doping FluctuationsJournal of Applied Physics, 1968