Characterization of Structural Changes and Defects in Ion Bombarded GaAs
- 1 January 1986
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- The electrical characteristics of ion implanted compound semiconductorsNuclear Instruments and Methods, 1981
- Electrical, Rutherford backscattering and transmission electron microscopy studies of furnace annealed zinc implanted GaAsSolid-State Electronics, 1980
- A model for the formation of amorphous Si by ion bombardmentRadiation Effects, 1970