Some comparisons of chemical beam epitaxy InGaAs/InP growth using triethylgallium, triisopropylgallium and triisobutylgallium sources
- 1 March 1994
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 136 (1-4) , 133-137
- https://doi.org/10.1016/0022-0248(94)90396-4
Abstract
No abstract availableKeywords
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