Mechanistic studies of the CBE growth of (100) GaAs using the new precursor tri-isopropylgallium
- 1 February 1993
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 127 (1-4) , 152-157
- https://doi.org/10.1016/0022-0248(93)90595-n
Abstract
No abstract availableKeywords
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