Investigations of oxygen precipitates in Czochralski silicon wafers by using infrared tomography
- 2 June 1990
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 103 (1-4) , 71-77
- https://doi.org/10.1016/0022-0248(90)90172-h
Abstract
No abstract availableKeywords
This publication has 18 references indexed in Scilit:
- Submicron optical sectioning microscopy: A particular inverse problem solution adapted to epilayer defect analysisJournal of Crystal Growth, 1990
- High resolution and sensitivity infrared tomographyJournal of Crystal Growth, 1990
- Laser scanning tomography: direct evidence of precipitate-free zone at surface of silicon wafersElectronics Letters, 1989
- The Role of EL2 Centres in Infra Red Images of Defects in GaAs MaterialsJapanese Journal of Applied Physics, 1988
- Defect Structures in InP Crystals by Laser Scanning TomographyJapanese Journal of Applied Physics, 1987
- A Comment on Defects in GaAs Crystals Observed by Infrared Light Scattering Tomography and IR Absorption MicroscopyJapanese Journal of Applied Physics, 1986
- The Effect of CMOS Processing on Oxygen Precipitation, Wafer Warpage, and FlatnessJournal of the Electrochemical Society, 1986
- Scattering and Absorption of Infrared Light on EL2 Clusters in GaAs Semi-Insulating MaterialsMRS Proceedings, 1986
- Thermochemical and Spectroscopic Studies of Chemically Vapor‐Deposited Amorphous SilicaJournal of the Electrochemical Society, 1986
- Observation of Lattice Defects in GaAs and Heat-treated Si Crystals by Infrared Light Scattering TomographyJapanese Journal of Applied Physics, 1983