Contact Potential Difference in Silicon Crystal Rectifiers
- 15 May 1947
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 71 (10) , 727-735
- https://doi.org/10.1103/physrev.71.727
Abstract
DOI: https://doi.org/10.1103/PhysRev.71.727Keywords
This publication has 6 references indexed in Scilit:
- Surface States and Rectification at a Metal Semi-Conductor ContactPhysical Review B, 1947
- Heat Treatment of Semi-Conductors and Contact RectificationPhysical Review B, 1946
- A Modified Kelvin Method for Measuring Contact Potential DifferencesReview of Scientific Instruments, 1946
- A Method for Measuring Effective Contact e.m.f. between a Metal and a Semi-conductorPhysical Review B, 1946
- Contacts Between Metals and Between a Metal and a SemiconductorPhysical Review B, 1942
- Vereinfachte und erweiterte Theorie der Randschicht-gleichrichterThe European Physical Journal A, 1942