New method to measure low Schottky barriers on n-type silicon
- 15 May 1986
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 59 (10) , 3537-3539
- https://doi.org/10.1063/1.336773
Abstract
To overcome difficulties which arise when either the series resistance is too high or the Schottky barrier height is too low, a new and simple method was developed to measure barrier height. Crucial point is the application of a ‘‘one‐sided’’ configuration. This method was successfully applied to the GdSi2 system, where φB =0.38±0.005 eV was measured.This publication has 4 references indexed in Scilit:
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- Low Schottky barrier of rare-earth silicide on n-SiApplied Physics Letters, 1981
- Contact reaction between Si and rare earth metalsApplied Physics Letters, 1981
- A modified forward I-V plot for Schottky diodes with high series resistanceJournal of Applied Physics, 1979