D-band (110–170 GHz) InP gunn devices
- 30 November 1993
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 36 (11) , 1547-1555
- https://doi.org/10.1016/0038-1101(93)90026-m
Abstract
No abstract availableKeywords
This publication has 20 references indexed in Scilit:
- High efficiency and output power from second- and third-harmonic millimeter-wave InP-TED oscillators at frequencies above 170 GHzIEEE Electron Device Letters, 1990
- LP-MOCVD InP Gunn Diodes Developed For 94 Gift Millimeter Range OperationPublished by SPIE-Intl Soc Optical Eng ,1989
- "Basics And Recent Applications Of High Efficiency Millimeter Wave InP Gunn Diodes"Published by SPIE-Intl Soc Optical Eng ,1989
- High-performance second-harmonic operation W-band GaAs Gunn diodesIEEE Electron Device Letters, 1989
- Selective etching technology for 94 GHz GaAs IMPATT diodes on diamond heat sinksSolid-State Electronics, 1989
- High-power 60 GHz monolithic GaAs impatt diodesElectronics Letters, 1986
- High-power high-efficiency LP-MOCVD InP Gunn diodes for 94 GHzElectronics Letters, 1984
- Harmonic operation of GaAs millimetre wave transferred electron oscillatorsElectronics Letters, 1981
- Efficient fundamental frequency oscillation from millimetre-wave indium phosphide n + - n - n + transferred electron oscillatorsElectronics Letters, 1981
- Ohmic contacts to n-GaAs using graded band gap layers of Ga1−xInxAs grown by molecular beam epitaxyJournal of Vacuum Science and Technology, 1981