Measurement of temperature in active high-power AlGaN/GaN HFETs using Raman spectroscopy
Top Cited Papers
- 7 August 2002
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 23 (1) , 7-9
- https://doi.org/10.1109/55.974795
Abstract
We report on the noninvasive measurement of temperature, i.e., self-heating effects, in active AlGaN/GaN HFETs grown on sapphire and SiC substrates. Micro-Raman spectroscopy was used to produce temperature maps with /spl ap/1 μm spatial resolution and a temperature accuracy of better than 10/spl deg/C. Significant temperature rises up to 180/spl deg/C were measured in the device gate-drain opening. Results from a three-dimensional (3-D) heat dissipation model are in reasonably good agreement with the experimental data. Comparison of devices fabricated on sapphire and SiC substrates indicated that the SiC substrate devices had /spl sim/5 times lower thermal resistance.Keywords
This publication has 9 references indexed in Scilit:
- Raman spectroscopy of GaN, AlGaN and AlN for process and growth monitoring/controlSurface and Interface Analysis, 2001
- Very-high power density AlGaN/GaN HEMTsIEEE Transactions on Electron Devices, 2001
- Gallium nitride based high power heterojunction field effect transistors: process development and present status at UCSBIEEE Transactions on Electron Devices, 2001
- Large periphery high-power AlGaN/GaN metal-oxide-semiconductor heterostructure field effect transistors on SiC with oxide-bridgingIEEE Electron Device Letters, 2001
- Thermal conductivity of fully and partially coalesced lateral epitaxial overgrown GaN/sapphire (0001) by scanning thermal microscopyApplied Physics Letters, 2000
- Temperature dependence of Raman scattering in single crystal GaN filmsApplied Physics Letters, 1999
- Recent Progress in SiC Microwave MESFETsMRS Proceedings, 1999
- Temperature distribution in Si-MOSFETs studied by micro-Raman spectroscopyIEEE Transactions on Electron Devices, 1992
- Thermal imaging of electronic devices with low surface emissivityIEE Proceedings G Circuits, Devices and Systems, 1991