Equivalent Circuit Model for Si Avalanche Photodetectors Fabricated in Standard CMOS Process

23 September 2008

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters

Vol. 29 (10) , 1115-1117
https://doi.org/10.1109/led.2008.2000717

Abstract

We present an equivalent circuit model for CMOS-compatible avalanche photodetectors. The equivalent circuit model includes an inductive component for avalanche delay, a current source for photogenerated carriers, and several components that model the device structure and parasitic effects. The model provides accurate impedance characteristics and photodetection frequency responses.

Keywords

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