Some Critical Materials and Processing Issues in SiC Power Devices
Open Access
- 21 November 2007
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 37 (5) , 646-654
- https://doi.org/10.1007/s11664-007-0321-3
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- A Case for High Temperature, High Voltage SiC Bipolar DevicesMaterials Science Forum, 2007
- A New Degradation Mechanism in High-Voltage SiC Power MOSFETsIEEE Electron Device Letters, 2007
- Deep-level transient spectroscopy study on double implanted n+–p and p+–n 4H-SiC diodesJournal of Applied Physics, 2004
- Physical properties of N2O and NO-nitrided gate oxides grown on 4H SiCApplied Physics Letters, 2001
- Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxideIEEE Electron Device Letters, 2001
- Crystal Defects as Source of Anomalous Forward Voltage Increase of 4H-SiC DiodesMaterials Science Forum, 2001
- Significantly improved performance of MOSFETs on silicon carbide using the 15R-SiC polytypeIEEE Electron Device Letters, 1999
- Defect energy levels in electron-irradiated and deuterium-implantedsilicon carbidePhysical Review B, 1999
- Charge-sheet model for silicon carbide inversion layersIEEE Transactions on Electron Devices, 1999
- Improved oxidation procedures for reduced SiO2/SiC defectsJournal of Electronic Materials, 1996