A buried-trench DRAM cell using a self-aligned epitaxy over trench technology
- 6 January 2003
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Advanced cell structures for dynamic RAMsIEEE Circuits and Devices Magazine, 1989
- The SPT cell—A new substrate-plate trench cell for DRAMsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1985
- A trench transistor cross-point DRAM cellPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1985