Carry‐over ‐ A Fundamental Problem in the MOVPE Growth of Heterostructures
- 1 January 1992
- journal article
- Published by Wiley in Crystal Research and Technology
- Vol. 27 (5) , 617-622
- https://doi.org/10.1002/crat.2170270508
Abstract
We have investigated the MOVPE growth of GaAs, GaP, and InP using TMGa‐TMN (trimethylgallium‐trimethylamine), TMIn‐TMN (trimethylindium‐trimethylamine) and the hydrides arsine and phosphine in reactor cells covered with products of preceding deposition processes. By measurements of the misfit Δa/a we find that besides arsenic also gallium and at higher growth temperatures even indium can be transferred from the predepositions into the epilayer. The mobilization of gallium is possible due to alkyl exchange reactions with indium‐methyl‐species. Indium is most probably mobilized due to its high vapour pressure at high growth temperatures. The extent of carry‐over is limited within a range of a few percent impurity concentration.Keywords
This publication has 12 references indexed in Scilit:
- Lateral and vertical composition control in MOCVD-grown InP/GaInAs(P) structuresJournal of Crystal Growth, 1991
- MOVPE of InP Using Trimethylindium – Trimethylamine AdductCrystal Research and Technology, 1991
- Infrared studies of exchange and pyrolysis reactions in mixtures of trimethylamine alane and trimethylgalliumJournal of Crystal Growth, 1990
- Methyl exchange reaction of trimethylindium on GaAs(100) and the preferential etching of galliumSurface Science, 1990
- Reduced EL2 concentration in MOCVD GaAs by addition of NH3 during growthJournal of Crystal Growth, 1989
- Organometallic vapour phase epitaxy of galliumarsenide using Ga(CH3)3 · N(CH3)3‐adduct as precursorCrystal Research and Technology, 1989
- A model for the surface chemical kinetics of GaAs deposition by chemical-beam epitaxyJournal of Applied Physics, 1988
- Determination of the heat of formation of trimethylindium and calculation of the mean In—CH3 bond dissociation energyCanadian Journal of Chemistry, 1968
- THE PYROLYSIS OF TRIMETHYL GALLIUMCanadian Journal of Chemistry, 1963
- Dissociation energies of metal-carbon bonds and the excitation energies of metal atoms in combinationPure and Applied Chemistry, 1961