Organometallic vapour phase epitaxy of galliumarsenide using Ga(CH3)3 · N(CH3)3‐adduct as precursor
- 1 January 1989
- journal article
- Published by Wiley in Crystal Research and Technology
- Vol. 24 (1) , 29-33
- https://doi.org/10.1002/crat.2170240106
Abstract
Epitaxial layers of GaAs have been grown by MOVPE using trimethylgallium‐trimethylamin‐adduct (TMGa‐TMN) as the Ga‐precursor. In comparison to the growth system using pure TMGa no significant influence on growth conditions and materials parameters could be found. The deposited GaAs is of fairly high quality with room temperature mobilities of 6700 cm2/Vs at free electron concentrations of about 1 × 1015 cm−3. No hints to nitrogen incorporation could be found.Keywords
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